Gatan Advanced STEM Detectors

Advanced STEM Detectors

Gatan

Advanced STEM detectors: HAADF, ADF and BF/DF detectors for EELS. Maximise electron collection with specially optimised detectors, to gain greater insights into your sample’s chemical and compositional properties.

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Benefits

Optimised angles for EELS

Gain an enhanced understanding of your sample’s chemical and compositional properties.

Calibrated output

Low noise

With broad range.

Compatible with Gatan cameras

Seamless data collection

Details

Optimised detectors for precise collection of electrons:
- Forward scattered electrons—EELS signal (0 to β), collection angle β regulated by STEM camera length
- Medium-angle electrons—Advanced BF/DF STEM detector (~β to 2x β)
- High-angle electrons—HAADF detector (~2x β to 7x β)
Absolute intensity measurements with detector offset and system gain calibration
Low noise electronics and scintillator/photomultiplier tube (PMT) based design
- Detect single electrons at low fluxes
- Record high signal-to-noise ratio images at typical fluxes
Optimise contrast in real time with automated PMT gain selection
Remote operation with software controlled detector gain and insertion
One-click switching from dark field to bright field STEM mode (model 807)
Integrates with Gatan EELS systems
Upgrade your existing STEM system: Compatible with Gatan cameras and DigiScan II

Gatan advanced STEM detectors work with EELS systems to collect the whole angular range of scattered electrons seamlessly. For EELS mapping and STEM (Scanning Transmission Electron Microscopy) imaging, it’s vital to control the detector angle for collecting and interpreting data effectively.

Applications

EELS (Electron Energy Loss Spectroscopy)
HAADF (High-Angle Annular Dark Field)
ADF (Annular Dark Field)
BF/DF (Bright and Dark Field)

Media Gallery

Images

Simultaneously acquired HAADF image (left) and ADF image (right) using Gatan STEM detectors. The Z-contrast effect of the HAADF image allows for easy interpretation of the contrast while the diffraction contrast in the ADF image provides highly detailed images. This joint acquisition of both provides a more complete picture of the sample.

a) HAADF image of a GaAs/GaAsP multilayer laminate; b) Integrated diffraction pattern of the superlattice structure along the [011] zone axis; c) Virtual BF image extracted from 4D data cube quantifying strain down to 1.2 nm resolution in full 2D area in eyy; d) exx strain for same area shown. courtesy V. B. Ozdol et al., National Center for Electron Microscopy, Lawrence Berkeley National Laboratory and Department of Materials Science and Engineering, University of California, Berkeley, California.

Videos