How cathodoluminescence can be used to study the emission patterns of nitride semiconductor micropillars for microLEDs in displays, including wearable devices.
How Raman spectroscopy can be used to characterise semiconductor materials. Measure defects in SiC, crystal quality, stress/strain, homogeneity and more.
Prepare high quality samples for SEM, EDS, EBSD, cathodoluminescence, EBIC and more with the Gatan PECS II broad argon beam system.
How nanoscale infrared spectroscopy can be used to measure semiconductor materials in defect and contamination analysis, and fabrication.
Characterise thin films with large area reciprocal space mapping. With the Bruker EIGER2 R 500K XRD detector you can map large areas in a realistic timeframe, collecting multiple substrate and… read more →
Breakthrough technique for identifying contaminants in failure analysis and process control, using O-PTIR.
Unambiguously identify organic contamination on silicon wafers and micro-electronics with a AFM-IR technique, using the Bruker Anasys nanoIR3.
EBIC (Electron-Beam Induced Current) is a technique for characterising the electrical properties of semiconductor materials & devices. Reveal the subsurface electronic structure and analyse defects.
How to analyse elemental distribution in rocks with XRF. In this case study we look at columbite-tantalite (coltan) in rocks from Canada, with the Bruker S8 TIGER Series 2 WDXRF… read more →