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CAMECA SIMS 4550

CAMECA SIMS 4550

Ultra low energy quadrupole SIMS for dopant depth profiling and thin layer analysis in semiconductors

The CAMECA SIMS 4550 is a Secondary Ion Mass Spectrometry system for ultra shallow depth profiling, trace element and composition measurements of thin layers in Si, high-k, SiGe and other compound materials such as III-V for optical devices.

  • Easy-to-use in-house SIMS for process diagnostics and R&D.
  • Maintain high production yields.
  • High throughput, with automated features for 24/7 operation.
  • Low detection limits, even for new materials like oxynitrides, low-and high-k dielectrics, compound semiconductors and coatings on glass and steel.
  • Precise, stable measurements.

Contact us for more information and quotes:
+44 (0)1223 422 269 or info@blue-scientific.com

Contact Us Brochure from CAMECA

CAMECA SIMS 4550

Applications

  • Semiconductor materials
  • Implant analysis
  • SiGe technology
  • Multi-layer insulators

Benefits

  • Ensure repeatability and uniformity
  • Monitor elemental composition within narrow margins
  • Easily measure depth profiles, elemental composition and segregation
  • Ultra high depth resolution
SIMS: Oxynitride thin layers

Oxynitride thin layers

High Depth Resolution

With ever-shrinking device dimensions, the CAMECA SIMS 4550 is equipped for implant profiles and layer thickness of semiconductors in the range of 1-10nm. It features an oxygen and cesium high density primary beam with an impact energy programmable from 5keV down to less than 150eV.

Flexible

The CAMECA SIMS 4550 is a flexible dynamic SIMS tool, covering a variety of applications.

  • Full flexible sputter conditions (impact angle, energy, species).
  • Analyse insulating materials with dedicated options for charge compensation (electron gun, laser) during sputtering.
  • Measure layer thickness, alignment, abruptness, integrity, uniformity and stoechiometry.
  • Sample holders for small pieces of a few mm² up to 100mm diameter.

High Precision and Automation

The SIMS 4550 has low detection limits for trace elements, with state-of-the-art quadrupole analyser optics and superior peak to background performance. There’s excellent sensitivity for H, C, N and O, with an advanced UHV design with main chamber pressure in the low E-10mbar (E-8Pa) range. Ultra stable ion sources and electronics ensure the highest precision and repeatability of measurements down to < 0.2% RSD.

To minimise human error, the software includes predefined recipes, remote operation and trouble-shooting. For each measurement, full instrument settings are stored in a database – so repeat measurements are only a few mouse clicks away.

Na in Glass

Na in Glass

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