Map defect distribution and variations for process development of materials for electronic / optoelectronic devices. CL is ideal for materials not suitable for photoluminescence spectroscopy.
Self-focusing SIMS is a new technique for measuring the composition of semiconductors and SiGE devices. It’s ten times faster than studying nanometre-scale features directly with methods such as TEM or APT.
How Raman spectroscopy can be used to characterise semiconductor materials. Measure defects in SiC, crystal quality, stress/strain, homogeneity and more.
Unambiguously identify organic contamination on silicon wafers and micro-electronics with a AFM-IR technique, using the Bruker Anasys nanoIR3.
How to analyse elemental distribution in rocks with XRF. In this case study we look at columbite-tantalite (coltan) in rocks from Canada, with the Bruker S8 TIGER Series 2 WDXRF… read more →
New Bruker Contour LS-K 3D optical profiler for fast, high quality surface maps and metrology data, with new technology for focus variation on samples with topography.