A new fully-integrated system from Gatan and DECTRIS provides low-voltage capabilities for electron counting on EELS, EFTEM and energy-filtered 4D STEM over the entire 30 – 300 kV voltage range.
Map defect distribution and variations for process development of materials for electronic / optoelectronic devices. CL is ideal for materials not suitable for photoluminescence spectroscopy.
Self-focusing SIMS is a new technique for measuring the composition of semiconductors and SiGE devices. It’s ten times faster than studying nanometre-scale features directly with methods such as TEM or APT.
How cathodoluminescence can be used to study the emission patterns of nitride semiconductor micropillars for microLEDs in displays, including wearable devices.
How Raman spectroscopy can be used to characterise semiconductor materials. Measure defects in SiC, crystal quality, stress/strain, homogeneity and more.
Prepare high quality samples for SEM, EDS, EBSD, cathodoluminescence, EBIC and more with the Gatan PECS II broad argon beam system.
How nanoscale infrared spectroscopy can be used to measure semiconductor materials in defect and contamination analysis, and fabrication.
Characterise thin films with large area reciprocal space mapping. With the Bruker EIGER2 R 500K XRD detector you can map large areas in a realistic timeframe, collecting multiple substrate and… read more →
Breakthrough technique for identifying contaminants in failure analysis and process control, using O-PTIR.
Unambiguously identify organic contamination on silicon wafers and micro-electronics with a AFM-IR technique, using the Bruker Anasys nanoIR3.